Schottky solar cells based on CsSnI3 thin-films

被引：282

作者：

Chen, Zhuo ^{[1
,2
]}

Wang, Jian J. ^{[3
]}

Ren, Yuhang ^{[2
,4
]}

Yu, Chonglong ^{[1
,2
]}

Shum, Kai ^{[1
,2
]}

机构：

[1] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[2] CUNY, Grad Ctr, New York, NY 10016 USA

[3] Sun Harmon Ltd, Brooklyn, NY 11235 USA

[4] CUNY Hunter Coll, Dept Phys, New York, NY 10065 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 09期

关键词：

HIGH-EFFICIENCY; PHASE; PHOTOLUMINESCENCE; ENERGY;

D O I：

10.1063/1.4748888

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a Schottky solar cell based on the perovskite semiconductor CsSnI3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of SnCl2 and CsI on glass substrate followed by a thermal annealing process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748888]

引用

页数：4

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