Photoluminescence study of polycrystalline CsSnI3 thin films: Determination of exciton binding energy

被引：213

作者：

Chen, Zhuo ^{[1
,2
]}

Yu, Chonglong ^{[1
,2
]}

Shum, Kai ^{[1
,2
]}

Wang, Jian J. ^{[3
]}

Pfenninger, William ^{[3
]}

Vockic, Nemanja ^{[3
]}

Midgley, John ^{[3
]}

Kenney, John T. ^{[3
]}

机构：

[1] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[2] CUNY, Grad Ctr, New York, NY 10016 USA

[3] OmniPV Inc, Menlo Pk, CA 94025 USA

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 02期

关键词：

Exciton; Radiative emission; Perovskite semiconductor; Photoluminescence; TRANSITIONS;

D O I：

10.1016/j.jlumin.2011.09.006

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the determination of exciton binding energy in perovskite semiconductor CsSnI3 through a series of steady state and time-resolved photoluminescence measurements in a temperature range of 10-300 K. A large binding energy of 18 meV was deduced for this compound having a direct band gap of 1.32 eV at room temperature. We argue that the observed large binding energy is attributable to the exciton motion in the natural two-dimensional layers of SnI4 tetragons in this material. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：345 / 349

页数：5

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