Electrically pumped ultraviolet ZnO diode lasers on Si

被引：245

作者：

Chu, Sheng ^{[1
]}

Olmedo, Mario ^{[1
]}

Yang, Zheng ^{[1
]}

Kong, Jieying ^{[1
]}

Liu, Jianlin ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

关键词：

antimony; current density; excitons; gallium; II-VI semiconductors; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; zinc compounds;

D O I：

10.1063/1.3012579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was grown on Si by molecular beam epitaxy. The diodes emit lasing at room temperature with a very low threshold injection current density of 10 A/cm(2). The lasing mechanism is exciton-related recombination and the feedback is provided by close-loop scattering from closely packed nanocolumnar ZnO grains formed on Si.

引用

页数：3

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