Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes

被引：89

作者：

Mandalapu, L. J. ^{[1
]}

Yang, Z. ^{[1
]}

Chu, S. ^{[1
]}

Liu, J. L. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

关键词：

D O I：

10.1063/1.2901018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterojunction light emitting diodes (LEDs) were fabricated by making Au/Ni top Ohmic contacts on Sb-doped p-type ZnO film with low specific contact resistivity and Al/Ti back Ohmic contacts on n-type Si substrate. Near-band edge and deep-level emissions were observed from the LED devices at both low temperatures and room temperature, which is due to band-to-band and band-to-deep level radiative recombinations in ZnO, respectively. The electroluminescence emissions precisely match those of photoluminescence spectra from Sb-doped p-type ZnO, indicating that the ZnO layer acts as the active region for the radiative recombinations of electrons and holes in the diode operation. (C) 2008 American Institute of Physics.

引用

页数：3

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