Synthesis and defect-related emission of ZnO based light emitting device with homo- and heterostructure

被引：44

作者：

Bian, Jiming ^{[1
]}

Liu, Weifeng ^{[1
]}

Sun, Jingchang ^{[1
]}

Liang, Hongwei ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, State Key Lab Mat Modificat Laser Ion Elect Beams, Dalian 116024, Peoples R China

来源：

JOURNAL OF MATERIALS PROCESSING TECHNOLOGY | 2007年 / 184卷 / 1-3期

关键词：

electroluminescence; ultrasonic spray pyrolysis; zinc oxide films; p-n junction; light emitting devices;

D O I：

10.1016/j.jmatprotec.2006.12.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To realize practical application of short-wavelength optoelectronic devices (such as light emitting diodes, LEDs, and LDs) based on ZnO materials, electroluminescence (EL) from ZnO based junction device is pivotal. In this article, ZnO based devices with different structures were grown on single-crystal GaAs(100) substrate by ultrasonic spray pyrolysis. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Moreover, heterojunction device with n-ZnMgO/ZnO/p-ZnMgO structure was also grown on single-crystal GaAs(100) substrate by the same method. Ohmic contact layer on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrodes, respectively. Distinct light emission was observed under forward current injection at room temperature. The origin of electroluminescence emission was supposed to be attributed to a radiative recombination through deep-level defects in the structure. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：451 / 454

页数：4

共 13 条

[1] Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis [J].