Zn0.9Mg0.1O/ZnO p-n junctions grown by pulsed-laser deposition

被引：84

作者：

Ip, K ^{[1
]}

Heo, YW

Norton, DP

Pearton, SJ

LaRoche, JR

Ren, F

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1783015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of Zn0.9Mg0.1O/ZnO p-n junctions grown by pulsed-laser deposition on bulk, single-crystal ZnO substrates are reported. The forward turn-on voltage of the junctions was in the range 3.6-4 V for Pt/Au metallization used for the p-Ohmic contact on Zn0.9Mg0.1O.The reverse breakdown voltage is as high as 9 V, but displays a small negative temperature coefficient of -0.1-0.2 V K-1 over the range 30-200degreesC. The achievement of acceptable rectification in the junctions required growth of an n-type ZnO buffer on the ZnO substrate prior to growth of the p-type, phosphorus-doped Zn(0.9)mg(0.1)O.Without this buffer, the junctions showed very high leakage current. (C) 2004 American Institute of Physics.

引用

页码：1169 / 1171

页数：3

共 23 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[2] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[3] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[4] Production of nitrogen acceptors in ZnO by thermal annealing [J].

Garces, NY ;

Giles, NC ;

Halliburton, LE ;

Cantwell, G ;

Eason, DB ;

Reynolds, DC ;

Look, DC .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1334-1336

[5]

HEO Y, 2003, APPL PHYS A, V78, P53

[6] p-type behavior in phosphorus-doped (Zn,Mg)O device structures [J].

Heo, YW ;

Kwon, YW ;

Li, Y ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3474-3476

[7] Transport properties of phosphorus-doped ZnO thin films [J].

Heo, YW ;

Park, SJ ;

Ip, K ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1128-1130

[8] Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy [J].

Heo, YW ;

Varadarajan, V ;

Kaufman, M ;

Kim, K ;

Norton, DP ;

Ren, F ;

Fleming, PH .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :3046-3048

[9] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[10] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE [J].

Iwata, K ;

Fons, P ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :526-531

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