Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

被引：155

作者：

Liu, W

Gu, SL ^{[1
]}

Ye, JD

Zhu, SM

Liu, SM

Zhou, X

Zhang, R

Shi, Y

Zheng, YD

Hang, Y

Zhang, CL

机构：

[1] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai, Peoples R China

[4] Natl Engn Ctr Res Special Mineral Mat, Guilin 541004, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2169908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

引用

页数：3

共 17 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].