Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

被引：120

作者：

Chu, S. ^{[1
]}

Lim, J. H. ^{[1
]}

Mandalapu, L. J. ^{[1
]}

Yang, Z. ^{[1
]}

Li, L. ^{[1
]}

Liu, J. L. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2908968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO p-n homojunction light emitting diodes were fabricated based on p-type Sb-doped ZnO/n-type Ga-doped ZnO thin films. Low resistivity Au/NiO and Au/Ti contacts were formed on top of p-type and n-type ZnO layers, respectively. Au/NiO contacts on p-type ZnO exhibited a low specific resistivity of 7.4x10(-4) Omega cm(2). The light emitting diodes yielded strong near-band-edge emissions in temperature-dependent and injection current-dependent electroluminescence measurements. (C) 2008 American Institute of Physics.

引用

页数：3

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