Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection

被引：102

作者：

Mandalapu, LJ ^{[1
]}

Yang, Z ^{[1
]}

Xiu, FX ^{[1
]}

Zhao, DT ^{[1
]}

Liu, JL ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.2178470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts. Current-voltage measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. Very good response to ultraviolet light illumination was observed from photocurrent measurements. (c) 2006 American Institute of Physics.

引用

页数：3

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