Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection

被引：53

作者：

Liu, K. W. ^{[1
]}

Shen, D. Z.

Shan, C. X.

Zhang, J. Y.

Yao, B.

Zhao, D. X.

Lu, Y. M.

Fan, X. W.

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excites State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2805816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn0.76Mg0.24O p-n photodiode was fabricated on (0001) Al2O3 substrate by plasma-assisted molecular beam epitaxy. Ni/Au and In metals deposited using vacuum evaporation were used as p-type and n-type contacts, respectively. Current-voltage measurements on the device showed weak rectifying behavior. The photodetectors exhibited a peak responsivity at around 325 nm. The ultraviolet-visible rejection ratio (R325 nm/R400 nm) of four orders of magnitude was obtained at 6 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and fall time of 150 ns. In addition, the thermally limited detectivity was calculated as 1.8x10(10) cm Hz(1/2)/W at 325 nm, which corresponds to a noise equivalent power of 8.4x10(-12) W/Hz(1/2) at room temperature. (c) 2007 American Institute of Physics.

引用

页数：3

共 11 条

[1] Electrical characterization of 1.8 MeV proton-bombarded ZnO [J].

Auret, FD ;

Goodman, SA ;

Hayes, M ;

Legodi, MJ ;

van Laarhoven, HA ;

Look, DC .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3074-3076

[2] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].

Choopun, S ;

Vispute, RD ;

Yang, W ;

Sharma, RP ;

Venkatesan, T ;

Shen, H .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531

[3]

DONATI S, 2000, DEVICES CIRCUITS APP, P43

[4] Realization of Mg(x=0.15)Zn(1-x=0.85)O-based metal-semiconductor-metal UV detector on quartz and sapphire [J].

Hullavarad, SS ;

Dhar, S ;

Varughese, B ;

Takeuchi, I ;

Venkatesan, T ;

Vispute, RD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04) :982-985

[5] Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications [J].

Koike, K ;

Hama, K ;

Nakashima, I ;

Takada, G ;

Ogata, K ;

Sasa, S ;

Inoue, M ;

Yano, M .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :288-292

[6] Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection [J].

Liu, K. W. ;

Zhang, J. Y. ;

Ma, J. G. ;

Jiang, D. Y. ;

Lu, Y. M. ;

Yao, B. ;

Li, B. H. ;

Zhao, D. X. ;

Zhang, Z. Z. ;

Shen, D. Z. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (09) :2765-2768

[7]

Narayan J, 2002, SOLID STATE COMMUN, V121, P9, DOI 10.1016/S0038-1098(01)00431-8

[8] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

[9] Formation of p-type MgZnO by nitrogen doping [J].

Wei, Z. P. ;

Yao, B. ;

Zhang, Z. Z. ;

Lu, Y. M. ;

Shen, D. Z. ;

Li, B. H. ;

Wang, X. H. ;

Zhang, J. Y. ;

Zhao, D. X. ;

Fan, X. W. .

APPLIED PHYSICS LETTERS, 2006, 89 (10)

[10] Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors [J].

Yang, W ;

Hullavarad, SS ;

Nagaraj, B ;

Takeuchi, I ;

Sharma, RP ;

Venkatesan, T ;

Vispute, RD ;

Shen, H .

APPLIED PHYSICS LETTERS, 2003, 82 (20) :3424-3426

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