Zn0.8Mg0.2O-based metal-semiconductor-metal photodiodes on quartz for visible-blind ultraviolet detection

被引：38

作者：

Liu, K. W.

Zhang, J. Y. ^{[1
]}

Ma, J. G.

Jiang, D. Y.

Lu, Y. M.

Yao, B.

Li, B. H.

Zhao, D. X.

Zhang, Z. Z.

Shen, D. Z.

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 09期

关键词：

D O I：

10.1088/0022-3727/40/9/014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn0.8Mg0.2O metal-semiconductor-metal ultraviolet photodiodes were fabricated on quartz by radio frequency magnetron sputtering. Dark current, spectral responsivity and pulse response experiments were carried out for the device. The photodetectors showed a peak responsivity at 330 nm. The ultraviolet-visible rejection ratio ( R330 nm/R400 nm) was more than four orders of magnitude at 3 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and a fall time of 170 ns. In addition, the thermally limited detectivity was calculated to be 3.1 x 10(11) cm Hz(1/2) W-1 at 330 nm.

引用

页码：2765 / 2768

页数：4

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