Phase separation suppression in InGaN epitaxial layers due to biaxial strain

被引：100

作者：

Tabata, A

Teles, LK

Scolfaro, LMR

Leite, JR

Kharchenko, A

Frey, T

As, DJ

Schikora, D

Lischka, K

Furthmüller, J

Bechstedt, F

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[2] Univ Gesamthsch Paderborn, D-33095 Paderborn, Germany

[3] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

[4] Univ Estadual Paulista, BR-17033360 Bauva, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 05期

关键词：

D O I：

10.1063/1.1436270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.

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页码：769 / 771

页数：3

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