Origin of luminescence from InGaN diodes

被引：491

作者：

O'Donnell, KP ^{[1
]}

Martin, RW ^{[1
]}

Middleton, PG ^{[1
]}

机构：

[1] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.82.237

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first direct observation of phase decomposition in a luminescent alloy and show that this decomposition, allied to quantum confinement enhancements, accounts for the surprisingly high efficiency of InGaN-based diodes manufactured by Nichia Chemical Industries. Hence nanostructure, rather than composition, is responsible for the success of these devices. A common nanostructure, in the form of nearly pure InN quantum dots, occurs across a large range of average indium content in InGaN and leads to a universal scalability of the optical spectra. [S0031-9007(98)08055-7].

引用

页码：237 / 240

页数：4

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