Raman investigation of InSe and GaSe single-crystals oxidation

被引：78

作者：

Balitskii, OA

Savchyn, VP

Yukhymchuk, VO

机构：

[1] Lviv Ivan Franko Natl Univ, Dept Phys, UA-79005 Lvov, Ukraine

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 02期

关键词：

D O I：

10.1088/0268-1242/17/2/101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the Raman scattering of thermally oxidized gallium selenide (GaSe) and indium selenide (InSe) single crystals. It has been established that the oxidation mechanisms of these compounds are rather different. For InSe, an increase of the oxidation temperature leads to the formation of (SeO4) complexes. For GaSe, it is characteristic that only Ga2O3 is formed as an oxygen-containing phase during the oxidation. The presence of the Me2Se3 phase (where Me is Ga or In) in its own oxide is common for both of the semiconductors.

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页码：L1 / L4

页数：4

相关论文

共 25 条

[1] Characteristics of phase formation during indium selenides oxidation [J].

Balitskii, OA ;

Berchenko, NN ;

Savchyn, VP ;

Stakhira, JM .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (02) :130-135

[2] Thermal oxidation of cleft surface of InSe single crystal [J].

Balitskii, OA ;

Lutsiv, RV ;

Savchyn, VP ;

Stakhira, JM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (01) :5-10

[3] Characteristics of phase formation during GaSe oxidation [J].

Berchenko, NN ;

Balitskii, OA ;

Lutsiv, RV ;

Savchyn, VP ;

Vasyltsiv, VI .

MATERIALS CHEMISTRY AND PHYSICS, 1997, 51 (02) :125-129

[4] CRITICAL ANALYSIS OF THE THERMODYNAMIC PROPERTIES OF THE IN-SE GASEOUS AND SOLID-PHASES [J].

CHATILLON, C .

JOURNAL OF CRYSTAL GROWTH, 1993, 129 (1-2) :297-311

[5] THERMODYNAMIC PROPERTIES OF SYSTEM INDIUM-OXYGEN [J].

CHATTERJI, D ;

VEST, RW .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1972, 55 (11) :575-+

[6] RAMAN-SPECTRA AND VALENCE FORCE-FIELD OF SINGLE-CRYSTALLINE BETA-GA2O3 [J].

DOHY, D ;

LUCAZEAU, G ;

REVCOLEVSCHI, A .

JOURNAL OF SOLID STATE CHEMISTRY, 1982, 45 (02) :180-192

[7] VALENCE FORCE-FIELD AND RAMAN-SPECTRA OF BETA-GA2O3 [J].

DOHY, D ;

LUCAZEAU, G .

JOURNAL OF MOLECULAR STRUCTURE, 1982, 79 (1-4) :419-422

[8] Preparation of highly oriented α-In2Se3 thin films by a simple technique [J].

Emziane, M ;

Marsillac, S ;

Bernède, JC .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 62 (01) :84-87

[9] XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE [J].

IWAKURO, H ;

TATSUYAMA, C ;

ICHIMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :94-99

[10]

Katerinchuk VN, 1996, INORG MATER+, V32, P827