CdTe nanoparticles spontaneously transform into the branched Te nanocrystals with the unique, highly anisotropic shape of checkmarks after partial removal of the stabilizers of L-cysteine. The Te checkmarks are made in a relatively high yield and uniformity; the length of the arms is ca. 150 nm, whereas the angle between the arms is 74 degrees. Subsequent growth of the particle yields mothlike nanocrystals retaining geometrical anisotropy. Unlike the previous synthesis methods of branched nanocrystals, they are formed via a merger of individual rod- shaped crystallites. High-energy crystal faces on their apexes act as the sticky points causing the particles to join in the ends. This is the first demonstration of spontaneous transformation of binary semiconductor particles into highly anisotropic nanocolloids in an angled conformation. The end reactivity of starting Te rods can be used both for bottom- up fabrication of nanoscale electronics and relatively safe and nontoxic method of synthesis of Te-based optical and other materials.
机构:
IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
;
Talapin, DV
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
;
Gaschler, W
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
;
Murray, CB
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
机构:
IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
;
Talapin, DV
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
;
Gaschler, W
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
;
Murray, CB
论文数: 0引用数: 0
h-index: 0
机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA