The fundamental 1/f noise and the hooge parameter in semiconductor quantum wires

被引：21

作者：

Balandin, A ^{[1
]}

Wang, KL

Svizhenko, A

Bandyopadhyay, S

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

1 f noise; magnetic field effects; phonons; quantum wires; silicon;

D O I：

10.1109/16.766892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have calculated the Hooge parameter alpha(H) characterizing fundamental 1/f noise in a free-standing intrinsic silicon quantum wire using microscopic noise theory. Our model takes into account quasi-one-dimensional confinement of both phonons and electrons. We find that at low temperatures, alpha(H) can be reduced significantly by an external magnetic field which suppresses large-angle electron scattering. This allows one to quench 1/f noise. Furthermore, a magnetic field provides a convenient tool to probe the source of noise in quantum wires, and, to a certain degree, test the validity of the microscopic mobility-fluctuation quantum noise model itself.

引用

页码：1240 / 1244

页数：5

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