Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors

We have investigated noise characteristics of novel GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias V-GS and the drain voltage V-DS varying from the linear to the saturation regions of operation V-DS > 5 V. Our results show that Bicker, e.g., 1/f noise, is the dominant limiting noise of these devices; and the Hooge parameter is on the order of 10(-5) - 10(-4). The gate voltage dependence of 1/f noise was observed in the linear region for all examined V-GS and in the saturation region for V-GS > 0. These results indicating low values of the Hooge parameter are important for microwave applications.