Intrinsic defects and metastability effects in Cu2O

被引：35

作者：

Mittiga, A. ^{[1
]}

Biccari, F. ^{[1
]}

Malerba, C. ^{[1
]}

机构：

[1] Casaccia Res Ctr, ENEA, I-00123 Rome, Italy

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Cuprous oxide; Defect complex; Persistent Photoconductivity; Capacitance Transient; CUPROUS-OXIDE; SINGLE-CRYSTALS; HALL-MOBILITY; POINT-DEFECTS;

D O I：

10.1016/j.tsf.2008.11.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2O based junctions (both Schottky and ZnO/Cu2O heterojunctions) exhibit a metastable capacitance increase after illumination or reverse bias application. We show that this effect is related to the persistent photoconductivity in Cu2O substrates. To obtain a quantitative evaluation of defect properties we have measured conductivity vs T, Capacitance-Voltage, persistent photoconductivity decay and capacitance transient at different temperatures. We show that it is impossible to explain these data using an electronic mechanism only. A new model which includes the formation-dissociation of intrinsic defect complexes (V-cu-V-O) can give instead a better agreement with the experimental data. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2469 / 2472

页数：4

共 16 条

[1] THE COPPER OXIDE RECTIFIER [J].