Plasma enhanced growth, composition and refractive index of silicon oxynitride films

被引：20

作者：

Bose, M

Bose, DN

Basa, DK ^{[1
]}

机构：

[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[2] Indian Inst Technol, Ctr Adv Technol, Kharagpur 721302, W Bengal, India

来源：

MATERIALS LETTERS | 2002年 / 52卷 / 06期

关键词：

silicon oxynitride; elastic backscattering (EBS); Rutherford backscattering (RBS); plasma-enhanced chemical vapor deposition; (PECVD); refractive index;

D O I：

10.1016/S0167-577X(01)00436-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon oxynitride films of various compositions have been prepared by the glow discharge decomposition of silane (SiH4) and nitrous oxide (N2O). The refractive index of the films has been measured using ellipsometry, while the composition of the films has been determined using Rutherford backscattering (RBS) and elastic backscattering (EBS) techniques. This study has demonstrated that the measurement of composition using EBS technique is distinctly superior to RBS technique, particularly for the films like silicon oxynitride containing multicomponent light elements in low concentration. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：417 / 422

页数：6

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