Real-space study of the pathway for dissociative adsorption of H2 on Si(001) -: art. no. 046104

被引：46

作者：

Dürr, M

Hu, Z

Biedermann, A

Höfer, U

Heinz, TF

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[3] Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.88.046104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dissociative adsorption of molecular hydrogen on clean Si(001) surfaces has been investigated by means of scanning tunneling microscopy. The dissociated hydrogen atoms are found to occupy Si atoms of adjacent dimers. In addition to this interdimer configuration associated with the adsorption of isolated hydrogen molecules, pairs of adjacent doubly occupied dimers are readily formed. They arise from the enhanced reactivity of partially occupied dimers following the initial H-2 adsorption step. The results are considered in light of recent adsorption and desorption measurements.

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页数：4

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共 31 条

[1] Dissociative adsorption of H2 on Si(100) induced by atomic H [J].

Biedermann, A ;

Knoesel, E ;

Hu, Z ;

Heinz, TF .

PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1810-1813

[2] EVIDENCE OF PAIRING AND ITS ROLE IN THE RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1539-1542

[3] Optical second-harmonic investigations of H-2 and D-2 adsorption on Si(100)2x1: The surface temperature dependence of the sticking coefficient [J].

Bratu, P ;

Kompa, KL ;

Hofer, U .

CHEMICAL PHYSICS LETTERS, 1996, 251 (1-2) :1-7

[4] Reaction dynamics of molecular hydrogen on silicon surfaces [J].

Bratu, P ;

Brenig, W ;

Gross, A ;

Hartmann, M ;

Hofer, U ;

Kratzer, P ;

Russ, R .

PHYSICAL REVIEW B, 1996, 54 (08) :5978-5991

[5] DETAILED BALANCE AND PHONON-ASSISTED STICKING IN ADSORPTION AND DESORPTION OF H-2/SI [J].

BRENIG, W ;

GROSS, A ;

RUSS, R .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1994, 96 (02) :231-234

[6] Reaction dynamics of H2 and D2 on Si(100) and Si(111) [J].

Brenig, W ;

Hilf, MF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (09) :R61-R94

[7] Dimer preparation that mimics the transition state for the adsorption of H2 on the Si(100)-2 x 1 surface [J].

Buehler, EJ ;

Boland, JJ .

SCIENCE, 2000, 290 (5491) :506-509

[8] Effect of beam energy and surface temperature on the dissociative adsorption of H2 on Si(001) [J].

Dürr, M ;

Raschke, MB ;

Höfer, U .

JOURNAL OF CHEMICAL PHYSICS, 1999, 111 (23) :10411-10414

[9] Structure sensitive reaction channels of molecular hydrogen on silicon surfaces [J].

Dürr, M ;

Raschke, MB ;

Pehlke, E ;

Höfer, U .

PHYSICAL REVIEW LETTERS, 2001, 86 (01) :123-126

[10]

DURR M, 2000, THESIS TU MUNCHEN

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