Nitrogen stability measurements in sputtered iron nitride thin films by thermal desorption spectrometry

被引:14
作者
Chatbi, H
Vergnat, M
Bobo, JF
Hennet, L
机构
[1] Lab. Metall. Phys. et Sci. des Mat., U.R.A. au C.N.R.S. no 155, Univ. Henri Ponicare Nancy 1, 54506 Vanduvre-les-Nancy Cedex
关键词
magnetic films and multilayers; phase transitions;
D O I
10.1016/S0038-1098(97)00066-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Different phases of iron nitrides were prepared by reactive sputtering. The release of nitrogen and the crystallographic transformations during annealing were monitored by thermal desorption spectrometry and X-ray diffraction experiments. Finally, the diffusivity of nitrogen in the gamma'-Fe4N phase was evaluated. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:677 / 679
页数:3
相关论文
共 6 条
[1]   DETERMINATION OF THE HYDROGEN DIFFUSION-COEFFICIENT IN HYDROGENATED AMORPHOUS-SILICON FROM HYDROGEN EFFUSION EXPERIMENTS [J].
BEYER, W ;
WAGNER, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8745-8750
[2]   MAGNETIC AND STRUCTURAL-PROPERTIES OF IRON NITRIDE THIN-FILMS OBTAINED BY ARGON-NITROGEN REACTIVE RADIOFREQUENCY SPUTTERING [J].
BOBO, JF ;
CHATBI, H ;
VERGNAT, M ;
HENNET, L ;
LENOBLE, O ;
BAUER, P ;
PIECUCH, M .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5309-5313
[3]   GROWTH AND CHARACTERIZATION STUDIES OF FE4N THIN-FILMS PREPARED BY ION-BEAM-ASSISTED EVAPORATION [J].
CHATBI, H ;
VERGNAT, M ;
BAUER, P ;
MARCHAL, G .
APPLIED PHYSICS LETTERS, 1995, 67 (03) :430-432
[4]  
Hansen M., 1958, CONSTITUTION BINARY, DOI DOI 10.1149/1.2428700
[5]  
KISSINGER HE, 1957, ANAL CHEM, V29, P1702, DOI DOI 10.1021/AC60131A045
[6]   Densification of amorphous silicon prepared by hydrogen-ion-beam-assisted evaporation [J].
Rinnert, H ;
Vergnat, M ;
Marchal, G ;
Burneau, A .
APPLIED PHYSICS LETTERS, 1996, 69 (11) :1582-1584