Densification of amorphous silicon prepared by hydrogen-ion-beam-assisted evaporation

被引：15

作者：

Rinnert, H ^{[1
]}

Vergnat, M ^{[1
]}

Marchal, G ^{[1
]}

Burneau, A ^{[1
]}

机构：

[1] UNIV HENRI POINCARE NANCY 1,UMR CNRS 9992,LAB CHIM PHYS ENVIRONM,F-54600 VILLERS LES NANCY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon films were deposited by ion-beam-assisted evaporation onto substrates maintained at 120 degrees C. The influence of the substrate bias was studied. By combined infrared spectrometry and thermal desorption spectrometry experiments, it is inferred that the bombardment of the growing a-Si:H film by energetic hydrogen ions produces a densification of the material without modification of the Si:H bonding. (C) 1996 American Institute of Physics.

引用

页码：1582 / 1584

页数：3

共 10 条

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