STRUCTURE AND TRANSPORT-PROPERTIES OF AMORPHOUS SNXSI1-X ALLOYS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)

被引：6

作者：

VERGNAT, M

MARCHAL, G

MANGIN, P

机构：

[1] Laboratoire de Physique du Solide (U.A. au C.N.R.S. no 155), Université de Nancy I, 54506 Vandœuvre les Nancy Cedex

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80267-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Evaporation on substrates maintained at 77 K under an atomic hydrogen flow allows us to prepare amorphous semiconductor tin. The resistivity is very high, 3 x 10(3) OMEGA-.cm and the diffraction pattern is typical of the random continuous networks of amorphous germanium and silicon. This structure is stable up to 180 K. The alloys SnxSi1-x prepared by this method present a continuous variation of the crystallization temperature and of the electrical behaviour versus the composition.

引用

页码：907 / 910

页数：4

共 10 条

[1] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS
AMBEGAOKAR, V
HALPERIN, BI
LANGER, JS
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08): : 2612 - +
[2] ELEKTRONENBEUGUNGS-AUFNAHMEN VON DUNNEN METALLSCHICHTEN BEI TIEFEN TEMPERATUREN
BUCKEL, W
[J]. ZEITSCHRIFT FUR PHYSIK, 1954, 138 (02): : 136 - 150
[3] ELECTRONIC-PROPERTIES OF METASTABLE GEXSN1-X ALLOYS
JENKINS, DW
DOW, JD
[J]. PHYSICAL REVIEW B, 1987, 36 (15): : 7994 - 8000
[4] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON
MOSS, SC
GRACZYK, JF
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &
[5] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &
[6] TEMKIN RJ, 1972, SOLID STATE COMMUN, V11, P1591, DOI 10.1016/0038-1098(72)90525-X
[7] STRUCTURE AND DC CONDUCTIVITY OF AMORPHOUS SI1-XSNX ALLOYS
VERGNAT, M
MARCHAL, G
PIECUCH, M
GERL, M
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (03) : 237 - 242
[8] PREPARATION OF HYDROGENATED AMORPHOUS-SILICON TIN ALLOYS
VERGNAT, M
MARCHAL, G
PIECUCH, M
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (12): : 1803 - 1808
[9] PREPARATION AND STRUCTURE OF AMORPHOUS-SEMICONDUCTOR HYDROGENATED TIN
VERGNAT, M
MARCHAL, G
MANGIN, P
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2300 - 2301
[10] 1987, HDB CHEM PHYSICS, pF122

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