Ion implantation and anneal to produce low resistance metal-diamond contacts

被引：14

作者：

Brandes, GR ^{[1
]}

Beetz, CP

Feger, CF

Wright, RW

Davidson, JL

机构：

[1] Adv Technol Mat Inc, Danbury, CT 06810 USA

[2] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

关键词：

contacts; diamond; ion implantation;

D O I：

10.1016/S0925-9635(99)00161-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Contacts to boron-doped, (100)-oriented diamond implanted with Si or with Si and B were formed and the effects of dose, implantation energy and anneal treatment on the specific contact resistance were examined. Ti/Au contacts on heavily implanted diamond (10(16) Si ions cm(-2), E-i = 30 keV or 10(17) Si and B ions cm(-2), E-i = 15 keV (Si) and E-i = 10 keV (B)) had a specific contact resistance lower than the best contacts produced on unimplanted diamond. A specific contact resistance of (1.4 +/- 6.4) x 10(-7) Ohm cm(-2) was achieved following a 450 degrees C anneal. The results were consistent with a reduction in barrier height brought about by silicide formation. Light silicon implantation (10(13) ions cm(-2)) or relatively light dual implantation (B, Si < 10(16) ions cm-2) did not reduce the specific contact resistance. Increasing the diamond conductivity by 4 x 10(4) decreased the specific contact resistance by over three orders of magnitude, in agreement with the trend observed by Prins (J.F. Prins, J. Phys. D 22 (1989) 1562). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：1936 / 1943

页数：8

共 20 条

[1]

BEETZ CP, 1992, SPIE P, P1759

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J].