Homogeneity measurements of plasma immersion ion-implanted complex-shaped samples

被引：18

作者：

Hochbauer, T ^{[1
]}

Ensinger, W ^{[1
]}

Schrag, G ^{[1
]}

Hartmann, J ^{[1
]}

Stritzker, B ^{[1
]}

Rauschenbach, B ^{[1
]}

机构：

[1] UNIV AUGSBURG,INST PHYS,D-86135 AUGSBURG,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(97)00023-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

It is commonly accepted, that one of the favourable features of plasma immersion ion implantation in comparison to conventional beam-line ion implantation is its ability to treat non-planar samples without complicated workpiece and beam manipulation. Therefore, it is of particular interest to study the homogeneity of PIII treatment of three-dimensional bodies. In the present paper, homogeneity measurements are of PIII treated model systems are discussed, Wedge-shaped specimens (V- and D-shaped) with different angles made of silicon were treated by plasma immersion ion implantation with argon ions. The voltage pulse heights ranged between 30 and 45 kV. The samples were analysed for retained implantation dose by lateral Rutherford backscattering measurements. These show that large gradients in implantation dose develop under the chosen PIII conditions. An explanation for these gradients is a misalignment of electric field lines, crooked near the edges of samples, and ion trajectories, due to the inertia of the ions.

引用

页码：869 / 872

页数：4

共 15 条

[1] PLASMA IMMERSION ION-IMPLANTATION FOR ULSI PROCESSING [J].