Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes

被引:38
作者
Osinski, M [1 ]
Perlin, P [1 ]
Schone, H [1 ]
Paxton, AH [1 ]
Taylor, EW [1 ]
机构
[1] VTMC, AF PHILLIPS LAB, PHOTON RES GRP, PL, ALBUQUERQUE, NM 87117 USA
关键词
light emitting diodes; semiconductor devices; optoelectronic devices;
D O I
10.1049/el:19970816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of proton irradiation on properties of commercial single-quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied. A dose of 2.3Mrad degraded the room-temperature light emission from the irradiated area of the device, while the electrical device characteristics remain practically unchanged. At low temperatures (similar or equal to 15K), however, the light emission recovers almost entirely, indicating the formation of a nonradiative recombination channel within the active layer of the device.
引用
收藏
页码:1252 / 1254
页数:3
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