Polarons in crystalline and non-crystalline materials

被引:238
作者
Austin, IG
Mott, NF
机构
[1] Department of Physics, University of Sheffield
[2] Cavendish Laboratory, Cambridge
关键词
D O I
10.1080/00018730110103249
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The current state of polaron theory as applicable to transition metal oxides is reviewed, including problems such as impurity conduction where disorder plays a role. An estimate is given of the conditions under which polaron formation leads to an enhancement of the mass but no hopping energy. The binding energy of a polaron to a donor or acceptor in narrow-band semiconductors is discussed. The experimental evidence about the conductivity of TiO2 and NiO is reviewed. Impurity conduction in NiO and conduction in glasses containing transition metal ions is discussed and it is emphasized that the activation energy for hopping nearly all vanishes at low temperatures. Pollak's theory of a.c. impurity conductivity is reviewed and applied to the problem of dielectric loss in these materials.
引用
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页码:757 / 812
页数:56
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