Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

被引：77

作者：

Lin, YS ^{[1
]}

Ma, KJ

Hsu, C

Chung, YY

Liu, CW

Feng, SW

Cheng, YC

Yang, CC

Mao, MH

Chuang, HW

Kuo, CT

Tsang, JS

Weirich, TE

机构：

[1] Natl Def Univ, Chung Cheng Inst Technol, Dept Mech Engn, Tao Yuan, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 10764, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[4] Adv Epitaxy Technol Inc, Hsinchu, Taiwan

[5] Rhein Westfal TH Aachen, Ctr Electron Microscopy, D-52074 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 14期

关键词：

D O I：

10.1063/1.1467983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Postgrowth thermal annealing of an InGaN/GaN quantum-well sample with a medium level of nominal indium content (19%) was conducted. From the analyses of high-resolution transmission electron microscopy and energy filter transmission electron microscopy, it was found that thermal annealing at 900 degreesC led to a quasiregular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950 degreesC. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. Blueshift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed. (C) 2002 American Institute of Physics.

引用

页码：2571 / 2573

页数：3

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