Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources

被引:59
作者
Carr, Joseph Alexander [1 ]
Hotz, Daniel [1 ]
Balda, Juan Carlos [1 ]
Mantooth, H. Alan [1 ]
Ong, Alvin [1 ]
Agarwal, Anant [2 ]
机构
[1] Univ Arkansas, Dept Elect Engn, NCREPT, Fayetteville, AR 72701 USA
[2] Cree Inc, Durham, NC USA
关键词
DC-DC converters; distributed energy resources (DERs); full bridge; silicon carbide (SiC) MOSFET; zero-current zero-voltage switching; POWER ELECTRONICS; ZERO-VOLTAGE; CONVERSION;
D O I
10.1109/TPEL.2008.2005500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Distributed energy resources (DERs) are becoming integral components of electric power distribution systems. In most cases, an isolated dc-dc converter forms part of the interface required to connect the DER output to the distribution system. Operation of the converter at high switching frequencies results in size reduction of passive components at the expense of increased switching losses. However, silicon carbide (SiC) power devices have the potential of operating at high switching frequencies without significant loss penalty because of their fast switching times and ability to work at high temperatures when compared to similar Si devices. SiC diodes have already displayed the ability to offer more ideal diode behavior than Si diodes. Engineering samples of SiC MOSFETs are depicting lower switching losses and conduction losses over Si MOSFETs. This display is making SiC devices attractive for dc-dc converters used to connect DERs to the distribution system. This paper particularly deals with the design of a 300-W 100-kHz dc-dc full-bridge converter using zero-voltage zero-current switching for comparison of SiC MOSFETs and diodes against Si MOSFETs and diodes.
引用
收藏
页码:260 / 270
页数:11
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