Trap-assisted tunneling current through ultra-thin oxide

被引：56

作者：

Wu, J ^{[1
]}

Rosenbaum, E ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761644

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Based on a consideration of the relative magnitudes of the direct and trap-assisted tunneling probabilities, this work explains why stress-induced leakage current is observed only within a "window" of oxide thickness. This work also provides further experimental evidence that SILC is due to inelastic trap-assisted tunneling of electrons from the cathode conduction band.

引用

页码：389 / 395

页数：7

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