Monolithic Integration of CMOS XLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications

被引：32

作者：

Akinwande, Deji ^{[1
,2
]}

Yasuda, Shinichi ^{[3
]}

Paul, Bipul ^{[3
]}

Fujita, Shinobu ^{[3
]}

Close, Gael ^{[1
,2
]}

Wong, H. -S. Philip ^{[1
,2
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Toshiba Co Ltd, Adv Large Scale Integrat Technol Lab, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2008年 / 7卷 / 05期

关键词：

Analog circuits; carbon nanotubes (CNTs); cascode amplifier; monolithic integration;

D O I：

10.1109/TNANO.2008.2003438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We integrate carbon nanotube (CNT) fabrication with standard commercial CMOS very large scale integration on a single substrate suitable for emerging hybrid nanotechnology applications. This cointegration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing. We demonstrate the successful cointegration on a single chip with a vehicle circuit, a two-transistor cascode megahertz amplifier utilizing both silicon n-channel MOSFET and CNT transistors with a total power consumption of 62.5 mu W.

引用

页码：636 / 639

页数：4

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