Defects in III-V semiconductor surfaces

被引：18

作者：

Ebert, P ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 01期

关键词：

D O I：

10.1007/s003390101059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports the measurement of the nanoscale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III-V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms.

引用

页码：101 / 112

页数：12

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