Defects in III-V semiconductor surfaces

被引：18

作者：

Ebert, P ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 01期

关键词：

D O I：

10.1007/s003390101059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports the measurement of the nanoscale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III-V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms.

引用

页码：101 / 112

页数：12

共 96 条

[21] Temperature dependent compensation of Zn-dopant atoms by vacancies in III-V semiconductor surfaces [J].

Ebert, P ;

Heinrich, M ;

Urban, K ;

Chao, KJ ;

Smith, AR ;

Shih, CK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :1807-1811

[22] Importance of many-body effects in the clustering of charged Zn dopant atoms in GaAs [J].

Ebert, P ;

Zhang, TJ ;

Kluge, F ;

Simon, M ;

Zhang, ZY ;

Urban, K .

PHYSICAL REVIEW LETTERS, 1999, 83 (04) :757-760

[23] SCANNING-TUNNELING-MICROSCOPE TIP-INDUCED MIGRATION OF VACANCIES ON GAP(110) [J].

EBERT, P ;

LAGALLY, MG ;

URBAN, K .

PHYSICAL REVIEW LETTERS, 1993, 70 (10) :1437-1440

[24] Direct determination of the interaction between vacancies on InP(110) surfaces [J].

Ebert, P ;

Chen, X ;

Heinrich, M ;

Simon, M ;

Urban, K ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 1996, 76 (12) :2089-2092

[25] Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces [J].

Ebert, P ;

Heinrich, M ;

Simon, M ;

Domke, C ;

Urban, K ;

Shih, CK ;

Webb, MB ;

Lagally, MG .

PHYSICAL REVIEW B, 1996, 53 (08) :4580-4590

[26] FORMATION OF ANION VACANCIES BY LANGMUIR EVAPORATION FROM INP(110) AND GAAS(110) SURFACES AT LOW-TEMPERATURES [J].

EBERT, P ;

HEINRICH, M ;

SIMON, M ;

URBAN, K ;

LAGALLY, MG .

PHYSICAL REVIEW B, 1995, 51 (15) :9696-9701

[27] Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110) [J].

Ebert, P ;

Urban, K ;

Aballe, L ;

Chen, CH ;

Horn, K ;

Schwarz, G ;

Neugebauer, J ;

Scheffler, M .

PHYSICAL REVIEW LETTERS, 2000, 84 (25) :5816-5819

[28] Nano-scale properties of defects in compound semiconductor surfaces [J].

Ebert, P .

SURFACE SCIENCE REPORTS, 1999, 33 (4-8) :121-303

[29] CHARGE-STATE-DEPENDENT STRUCTURAL RELAXATION AROUND ANION VACANCIES ON INP(110) AND GAP(110) SURFACES [J].

EBERT, P ;

URBAN, K ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1994, 72 (06) :840-843

[30] Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy [J].

Ebert, P ;

Urban, K .

PHYSICAL REVIEW B, 1998, 58 (03) :1401-1404

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