Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy

被引：12

作者：

Ebert, P ^{[1
]}

Urban, K ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.58.1401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work. [S0163-1829(98)02927-0].

引用

页码：1401 / 1404

页数：4

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