Effect of Si on the electronic structure of sputter-deposited C films: an electron spectroscopy study

被引：6

作者：

Speranza, G ^{[1
]}

Laidani, N ^{[1
]}

Calliari, L ^{[1
]}

Anderle, M ^{[1
]}

机构：

[1] IRST, ITC, Ctr Ric Sci & Tecnol, I-38050 Trent, Italy

来源：

关键词：

band structure; diamond-like carbon; photoelectron spectroscopy; silicon;

D O I：

10.1016/S0925-9635(98)00287-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of the electronic structure of C films is followed through the independent measurement of their s and p partial 'density of states' (DOS). The interest in such an approach is that the mutual relationship between the two partial DOS is a powerful indicator of the diamond-like or graphite-like character of a given system. It is shown here by this approach that a graphite-like structure is brought about in C films by thermal treatments, while a diamond-like structure is induced by Si addition during the deposition process. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：517 / 521

页数：5

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