Diffusion mediated by doping and radiation-induced point defects

被引：26

作者：

Bracht, H ^{[1
]}

机构：

[1] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

semiconductors; silicon; self-diffusion; dopant diffusion; point defects; proton irradiation;

D O I：

10.1016/j.physb.2005.12.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growth of isotopically enriched epitaxial layers enables the preparation of material heterostructures, highly appropriate for simultaneous self- and dopant-diffusion studies. The advance in solid-state diffusion is demonstrated by experiments on the impact of dopant diffusion and proton irradiation on self-diffusion in silicon. Accurate modeling provides valuable information about the type and charge states of native point defects and the mechanisms of atomic transport. The results are compared with recent theoretical calculations. Consistencies and differences between experiment and theory are highlighted. (c) 2005 Elsevier B.V. All rights reserved.

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页码：11 / 18

页数：8

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