Influence of additives on nucleation and growth of copper on n-Si(111) from acidic sulfate solutions

被引:62
作者
Radisic, A [1 ]
West, AC
Searson, PC
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
[2] Columbia Univ, Dept Chem Engn, New York, NY 10027 USA
关键词
D O I
10.1149/1.1430719
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Additives are widely used in electrodeposition to control roughness and texture. In this paper we report on the influence of additives on the nucleation and growth of copper on n-Si(111) from acidic sulfate solution with addition of polyethylene glycol, chloride, Janus Green B, and bis(3-sulfopropyl) disulfide. Deposition occurs via Volmer-Weber (island) growth independent of the presence of the additives. For all solutions growth follows progressive nucleation and 3D diffusion-limited growth. The nucleation rate and nucleus density increase exponentially with increasing negative potentials. The nucleus density in the presence of additives is about an order of magnitude lower than for solutions with no additives at any given potential, illustrating that the additives influence the nucleation rate. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1430719] All rights reserved.
引用
收藏
页码:C94 / C99
页数:6
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