Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect

Today, copper and low-k dielectric are required to reduce interconnect delay and decrease parasitic capacitance. This paper presents the integration of copper with an organic low-k dielectric (k = 2.7) and is focused on the adaptation of the processes required when switching from SiO2 to this pure organic dielectric, After integration in a dual metal level interconnect for 0.12-mum generation, it is shown that good electrical results are obtained (100% yield for 0.4-mum pitch, via resistance < 1 Omega, capacitance reduction of 40% compared to CU/SiO2 structures), but care must be taken when integrating this low-k material due to its low thermo-mechanical property and sensibility to moisture absorption. (C) 2002 Elsevier Science BY All rights reserved.