Microcrystalline silicon thin films grown at high deposition rate by PECVD

被引：16

作者：

Ambrosone, G.

Coscia, U.

Lettieri, S.

Maddalena, P.

Ambrico, M.

Perna, G.

Minarini, C.

机构：

[1] Univ Naples Federico II, CNR, INFM Coherentia, Complesso Univ Monte S Angelo, I-80126 Naples, Italy

[2] Univ Naples Federico II, Complesso Univ Monte S Angelo, Dipartimento Sci Fisiche, I-80126 Naples, Italy

[3] CNR, IMIP, Sez Bari, I-70126 Bari, Italy

[4] Univ Foggia, Dipartimento Sci Biomed, I-71100 Foggia, Italy

[5] Ist Nazl Fis Mat, Sez Bari, I-70126 Bari, Italy

[6] ENEA, Res Ctr, I-80055 Portici, NA, Italy

来源：

THIN SOLID FILMS | 2006年 / 511卷

关键词：

microcrystalline silicon; RF-PECVD; optical absorption;

D O I：

10.1016/j.tsf.2005.12.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated microcrystalline silicon films have been deposited by RF-PECVD varying the RF power from 20 to 200 W, using a silane concentration of 3% and a total flow rate of 206 sccm. The film properties do not change appreciably in a wide range of PF power: dark conductivity, hydrogen content and grain dimension are approximately constant, 10(-4) S/cm, 2 at.%, 10 nm, respectively. A deposition rate of 0.5 mn/s has been reached at the RF power of 150 W Films deposited at high deposition rate show, in the near infrared region, a clear enhancement of optical absorption due to the light scattering and low defect absorption. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：280 / 284

页数：5

共 23 条

[1] Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications [J].