High rate growth of microcrystalline silicon by VHF-GD at high pressure

被引：96

作者：

Graf, U ^{[1
]}

Meier, J ^{[1
]}

Kroll, U ^{[1
]}

Bailat, J ^{[1
]}

Droz, C ^{[1
]}

Vallat-Sauvain, E ^{[1
]}

Shah, A ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtech, CH-2000 Neuchatel, Switzerland

来源：

THIN SOLID FILMS | 2003年 / 427卷 / 1-2期

关键词：

thin-film microcrystalline silicon layers; high rate deposition; VHF-GD;

D O I：

10.1016/S0040-6090(02)01178-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate has been investigated. Deposition rates of over 25 Angstrom/s have been achieved at relatively low total gas flows of 100 seem. These high-rate films show device-grade quality with respect to subband gap absorption and microcrystalline structure. Dark conductivity measurements reveal midgap character and transmission electron microscopy investigations confirm a highly crystalline microstructure from the bottom to the top of the muc-Si:H films. These high-rate muc-Si:H layers are very interesting candidates for solar cell and other devices. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：37 / 40

页数：4

共 10 条

[1]

BENEDICT J, 1992, MATER RES SOC SYMP P, V254, P121, DOI 10.1557/PROC-254-121

[2]

DUBAIL J, 2000, P MAT RES SOC S, V609

[3]

Fay S., 2000, P 16 EUR PHOT SOL EN, P361

[4] High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma [J].

Fukawa, M ;

Suzuki, S ;

Guo, LH ;

Kondo, M ;

Matsuda, A .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :217-223

[5] High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition [J].

Guo, LH ;

Kondo, M ;

Fukawa, M ;

Saitoh, K ;

Matsuda, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A) :L1116-L1118

[6] High rate growth of microcrystalline silicon at low temperatures [J].

Kondo, M ;

Fukawa, M ;

Guo, LH ;

Matsuda, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :84-89

[7] ORIGINS OF ATMOSPHERIC CONTAMINATION IN AMORPHOUS-SILICON PREPARED BY VERY HIGH-FREQUENCY (70 MHZ) GLOW-DISCHARGE [J].

KROLL, U ;

MEIER, J ;

KEPPNER, H ;

SHAH, A ;

LITTLEWOOD, SD ;

KELLY, IE ;

GIANNOULES, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (06) :2742-2746

[8]

LAMBERTZ A, 2001, 17 EUR PHOT SOL EN C

[9] Towards high-efficiency thin-film silicon solar cells with the ''micromorph'' concept [J].

Meier, J ;

Dubail, S ;

Platz, R ;

Torres, P ;

Kroll, U ;

Selvan, JAA ;

Vaucher, NP ;

Hof, C ;

Fischer, D ;

Keppner, H ;

Fluckiger, R ;

Shah, A ;

Shklover, V ;

Ufert, KD .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :35-44

[10]

SUZUKI S, 2001, TECH DIGEST PVSEC 12, P559

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