ANNEALING AND CRYSTALLIZATION PROCESSES IN A HYDROGENATED AMORPHOUS SI-C ALLOY FILM

被引:160
作者
BASA, DK [1 ]
SMITH, FW [1 ]
机构
[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031
关键词
Silicon and Alloys;
D O I
10.1016/0040-6090(90)90483-T
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A hydrogenated amorphous SiC alloy film (a-Si1-xCx:H with x = 0.29) was prepared by glow discharge decomposition of a silane and ethylene gas mixture. A careful and detailed investigation of the IR absorption was undertaken in the range from 400 to 4000 cm-1 for both the as-deposited (Ts = 250°C) and annealed (up to 1200°C) film. In addition to the changes in the local bonding brought about by annealing, the study demonstrates clearly that there is a structural change from amorphous to microcrystalline at Ta = 800°C and then to a crystalline phase at Ta = 1200°C. © 1990.
引用
收藏
页码:121 / 133
页数:13
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