Solid source molecular beam epitaxy of low threshold 1.55 mu m wavelength GaInAs/GaInAsP/InP semiconductor lasers

被引：4

作者：

Johnson, FG

King, O

Seiferth, F

Stone, DR

Whaley, RD

Dagenais, M

Chen, YJ

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20740

[2] UNIV MARYLAND,DEPT ELECT ENGN,BALTIMORE,MD 21228

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.589014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth and characterization of 1.55 mu m wavelength GaInAsP based semiconductor lasers grown by solid source molecular beam epitaxy. Quaternary compositions were reproducible over time. Photoluminescence and x-ray diffraction spectra indicate abrupt quantum well interfaces. Separate confinement heterostructure laser diodes with four quantum wells had threshold current densities as low as 580 A/cm(2) and 275 A/cm(2) for unstrained Ga0.47In0.53As and strained Ga0.27In0.73As0.8P0.2 wells, respectively. These results are as good as the best results reported for similar lasers grown by any growth technique. (C) 1996 American Vacuum Society.

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页码：2753 / 2756

页数：4

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