Electrical characterization of p-ZnO/p-Si heterojunction

被引：35

作者：

Majumdar, S. ^{[1
]}

Chattopadhyay, S. ^{[2
]}

Banerji, P. ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 12期

关键词：

ZnO; p-Type conduction; Heterojunction; Pulsed laser deposition; UNDOPED ZNO; FILMS; CONDUCTIVITY; DEPOSITION; EMISSION; BEHAVIOR;

D O I：

10.1016/j.apsusc.2009.01.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It shows a diode-like behavior with turn-on voltage of 0.5 V. The ideality factor eta determined by applying positive potential in p-ZnO and negative potential along p-Si is found to be 6. Such a high value of h is attributed to lattice mismatch between ZnO and Si. and other factors responsible are thermoionic emission, minority carrier injection and recombination. C-V results indicate an abrupt interface and a band bending of 0.9 V in the silicon. Heterojunction band diagram for p-ZnO/p-Si is proposed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6141 / 6144

页数：4

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