Electrochemically constructed p-Cu2O/n-ZnO heterojunction diode for photovoltaic device

被引：298

作者：

Izaki, Masanobu

Shinagawa, Tsutomu

Mizuno, Ko-Taro

Ida, Yuya

Inaba, Minoru

Tasaka, Akimasa

机构：

[1] Osaka Municipal Tech Res Inst, Joto Ku, Dept Elect Mat, Osaka 5368553, Japan

[2] Doshisha Univ, Grad Sch Engn, Kyoto 6100321, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 11期

关键词：

ZINC-OXIDE FILMS; LOW-TEMPERATURE ELECTRODEPOSITION; AQUEOUS-SOLUTION; SOLAR-CELLS; THIN-FILMS; DEPOSITION; SEMICONDUCTOR;

D O I：

10.1088/0022-3727/40/11/010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline n-ZnO/p-Cu2O heterojunctions have been fabricated by low-temperature eletrodepositions of ZnO and Cu2O layers in aqueous solutions. The condition for forming the Cu2O layer significantly reflected the electrical rectification characteristic and the photovoltaic performance, and the heterojunction fabricated under optimized conditions showed an excellent electrical rectification characteristic and a photovoltaic performance of 1.28% in conversion efficiency under an AM 1.5 illumination.

引用

收藏

页码：3326 / 3329

页数：4

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