Polycrystalline n-ZnO/p-CU2O heterojunctions grown by RF-magnetron sputtering

被引：62

作者：

Ishizuka, S ^{[1
]}

Suzuki, K ^{[1
]}

Okamoto, Y ^{[1
]}

Yanagita, M ^{[1
]}

Sakurai, T ^{[1
]}

Akimoto, K ^{[1
]}

Fujiwara, N ^{[1
]}

Kobayashi, H ^{[1
]}

Matsubara, K ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys Appl, CREST, Japan Sci & Technol Corp, Tsukuba, Ibaraki 3058573, Japan

来源：

11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS | 2004年 / 1卷 / 04期

关键词：

D O I：

10.1002/pssc.200304245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline n-ZnO/p-Cu2O heterojunctions were fabricated by reactive sputtering for photovoltaic applications. Although electrical rectification was not reproducibly obtained in the as-grown samples, rectification was observed in the samples fabricated with cyanide treated Cu2O. We have previously shown that cyanide treatment has an effective role in passivation of defects in Cu2O, in analogy to hydrogen passivation. It is, therefore, believed that the observed improvement in the electrical rectification of the ZnO/Cu2O heterojunctions is attributable to the defect passivation near the hetero-interface. The effectiveness of the cyanide treatment and the importance of defect passivation in ZnO/Cu2O heterojunctions are presented. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1067 / 1070

页数：4

共 9 条

[1] Thin-film deposition of Cu2O by reactive radio-frequency magnetron sputtering [J].

Ishizuka, S ;

Maruyama, T ;

Akimoto, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (8A) :L786-L788

[2] Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment [J].

Ishizuka, S ;

Kato, S ;

Okamoto, Y ;

Sakurai, T ;

Akimoto, K ;

Fujiwara, N ;

Kobayashi, H .

APPLIED SURFACE SCIENCE, 2003, 216 (1-4) :94-97

[3] Control of hole carrier density of polycrystalline Cu2O thin films by Si doping [J].

Ishizuka, S ;

Kato, S ;

Okamoto, Y ;

Akimoto, K .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :950-952

[4] Nitrogen doping into Cu2O thin films deposited by reactive radio-frequency magnetron sputtering [J].

Ishizuka, SO ;

Kato, S ;

Maruyama, T ;

Akimoto, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B) :2765-2768

[5] Improvement of electrical characteristics of (indium-tin oxide silicon oxide polycrystalline n-Si) solar cells by a KCN treatment [J].

Kobayashi, H ;

Tachibana, S ;

Nakato, Y ;

Yoneda, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) :2893-2897

[6] Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment [J].

Kobayashi, H ;

Asano, A ;

Takahashi, M ;

Yoneda, K ;

Todokoro, Y .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4392-4394

[7] Passivation of defects in nitrogen-doped polycrystalline Cu2O thin films by crown-ether cyanide treatment [J].

Okamoto, Y ;

Ishizuka, S ;

Kato, S ;

Sakurai, T ;

Fujiwara, N ;

Kobayashi, H ;

Akimoto, K .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1060-1062

[8] EXPERIMENTAL AND THEORETICAL-STUDIES OF CU2O SOLAR-CELLS [J].

OLSEN, LC ;

ADDIS, FW ;

MILLER, W .

SOLAR CELLS, 1982, 7 (03) :247-279

[9] Electrical and optical properties of copper oxide films prepared by reactive RF magnetron sputtering [J].

Parretta, A ;

Jayaraj, MK ;

DiNocera, A ;

Loreti, S ;

Quercia, L ;

Agati, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 155 (02) :399-404

← 1 →