Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

被引：92

作者：

Chuang, Steven ^{[1
,2
]}

Kapadia, Rehan ^{[1
,2
]}

Fang, Hui ^{[1
,2
,3
]}

Chang, Ting Chia ^{[1
]}

Yen, Wen-Chun ^{[4
]}

Chueh, Yu-Lun ^{[4
]}

Javey, Ali ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

关键词：

SEMICONDUCTOR; GRAPHENE; HETEROSTRUCTURES; TRANSISTORS; EPITAXY; LAYER;

D O I：

10.1063/1.4809815

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Here, we present the fabrication and electrical analysis of InAs/WSe2 van der Waals heterojunction diodes formed by the transfer of ultrathin membranes of one material upon another. Notably, InAs and WSe2 are two materials with completely different crystal structures, which heterojunction is inconceivable with traditional epitaxial growth techniques. Clear rectification from the n-InAs/p-WSe2 junction (forward/reverse current ratio >10(6)) is observed. A low reverse bias current <10(-12) A/mu m(2) and ideality factor of similar to 1.1 were achieved, suggesting near-ideal electrically active interfaces. (C) 2013 AIP Publishing LLC.

引用

页数：4

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