Chemically amplified negative-tone resist using novel acryl polymer for 193nm lithography

被引:8
作者
Hada, H [1 ]
Iwai, T [1 ]
Nakayama, T [1 ]
机构
[1] Tokyo Ohka Kogyo Co Ltd, Adv Mat Dev Div 2, Kanagawa 2530114, Japan
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
193nm; negative tone resist; alpha-hydroxymethyl acrylate; cross linking reaction; swelling;
D O I
10.1117/12.350254
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the development of a novel acryl polymer with an alpha-hydroxymethyl acrylate in the application to 193nm chemically amplified negative-tone resist. This new polymer structure consists of (alpha-hydroxymethyl)acrylate and MAA. The ester and alcohol group in the polymer contribute to an intramolecule and/or intermolecular hybrid crosslinking reactions without crosslinker and in the presence of a photo generated acid-as a catalysis, In an intramolecular crosslink reaction, the ester group reacts to a neighboring hydroxymethyl group within the polymer chain. As a result, a lactone group is made in the main polymer chain. On the other hand, in an intermolecular crosslink reaction, the ester group reacts to a hydroxymethyl group of another polymer chain to make an ester chain. In this reaction, the new:polymer is densely crosslinked and fine resist pattern is obtained without having any swelling problem.. Consequently, the resist is optimized and contains the new polymer, photo acid generator and a small amount of crosslinker. Under conventional illumination condition, 180nm line and space pattern are achieved without any kind of swelling problem. The sensitivity is 40mJ/cm(2) with the standard developer, NMD-3 2.38%.
引用
收藏
页码:676 / 683
页数:8
相关论文
共 11 条
[1]  
ALLEN RD, 1994, J PHOTOPOLYM SCI TEC, V7, P507
[2]  
ALLEN RD, 1993, J PHOTOPOLYM SCI TEC, V6, P575
[3]  
HATTORI T, 1997, J PHOTOPOLYM SCI TEC, V10, P535
[4]   Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography [J].
Iwasa, S ;
Nakano, K ;
Maeda, K ;
Hasegawa, E .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 :417-424
[5]  
JUNG JC, 1997, J PHOTOPOLYM SCI TEC, V10, P529
[6]   Negative-type chemically amplified resists for ArF excimer laser lithography [J].
Naito, T ;
Takahashi, M ;
Ohfuji, T ;
Sasago, M .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 :503-511
[7]   HIGHLY TRANSPARENT CHEMICALLY AMPLIFIED ARF EXCIMER-LASER RESISTS BY ABSORPTION-BAND SHIFT FOR 193 NM WAVELENGTH [J].
NAITO, T ;
ASAKAWA, K ;
SHIDA, N ;
USHIROGOUCHI, T ;
NAKASE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :7028-7032
[8]  
NAKANO K, 1994, P SOC PHOTO-OPT INS, V2195, P194, DOI 10.1117/12.175336
[9]   Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography [J].
Ohfuji, T ;
Maeda, K ;
Nakano, K ;
Hasegawa, E .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 :386-398
[10]  
TAKAHASHI M, 1994, J PHOTOPOLYM SCI TEC, V7, P31