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Surface segregation in (Ga,In)As/GaAs quantum boxes

被引：52
作者：
Grandjean, N
Massies, J
Tottereau, O
机构：
[1] Centre de Recherche sur lșHétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS)
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.55.R10189
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Three-dimensional coherent islands formed during the highly strained growth of In(0.3)G(0.7)As on GaAs(001) are studied by scanning tunneling microscopy. High-resolution images evidence two different types of surface reconstructions between the top and the bottom of the islands. While a 2x4 GaAs(001)-like reconstruction is observed on the wetting layer, the top layer exhibits the (2x4)alpha 2 phase, which is characteristic of the InAs(001) reconstructed surface. This is the consequence of In surface segregation leading to the formation of a monolayer of InAs at the island top. Finally, photoluminescence experiments exemplify the effect of segregation on the InxGa1-xAs/GaAs quantum box optical properties.
引用
收藏
页码：10189 / 10192
页数：4
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