Detection of DNA and proteins using amorphous silicon ion-sensitive thin-film field effect transistors

被引:77
作者
Goncalves, D. [1 ,2 ]
Prazeres, D. M. F. [2 ,3 ]
Chu, V. [1 ,3 ]
Conde, J. P. [1 ]
机构
[1] INESC MN, P-1000029 Lisbon, Portugal
[2] Univ Tecn Lisboa, Ctr Biol & Chem Engn, Inst Biotechnol & Bioengn, Inst Super Tecn, P-1049001 Lisbon, Portugal
[3] Univ Tecn Lisboa, Dept Biol & Chem Engn, Inst Super Tecn, P-1049001 Lisbon, Portugal
关键词
Thin film transistors; ISFET; a-Si:H; Biosensor; Molecular charge;
D O I
10.1016/j.bios.2008.05.006
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
Amorphous silicon-based ion-sensitive field-effect transistors (a-Si:H ISFETs) are used for the label-free detection of biological molecules. The covalent immobilization of DNA, followed by DNA hybridization, and of the surface adsorption of oligonucleotides and proteins were detected electronically by the a-Si:H ISFET. The ISFET measurements are performed with an external Ag/AgCl microreference electrode immersed in 100 mM phosphate buffer electrolyte with pH 7.0. Threshold voltage shifts in the transfer curve of the ISFETs are observed resulting from successive steps of surface chemical functionalization, covalent DNA attachment to the functionalized surface, surface blocking, and hybridization with a complementary target. The surface sensitivity achieved for DNA oligonucleotides is of the order of 1 pmol/cm(2). Point-of-zero charge estimations were made for the functionalized surfaces and for the device surface after DNA immobilization and hybridization. The results show a correlation between the changes in the point-of-zero charge and the shift observed in the threshold voltage of the devices. Electronic detection of adsorbed proteins and DNA is also achieved by monitoring the shifts of the threshold voltage of the ISFETs, with a sensitivity of approximately 50 nM. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:545 / 551
页数:7
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