Analysis of local and global transient effects in a CMOS SRAM

被引：5

作者：

Gardic, F ^{[1
]}

Musseau, O ^{[1
]}

Flament, O ^{[1
]}

Brisset, C ^{[1
]}

FerletCavrois, V ^{[1
]}

Martinez, M ^{[1
]}

Corbiere, T ^{[1
]}

机构：

[1] MATRA MHS,F-44087 NANTES 03,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.510731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the sensitivity of a 256 kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in pheripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence.

引用

页码：899 / 906

页数：8

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